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www.kersemi.com 1 12/03/04 IRFR3412PBF irfu3412pbf smps mosfet hexfet power mosfet v dss r ds(on) max i d 100v 0.025 ? 48a switch mode power supply (smps) motor drive bridge converters all zero voltage switching lead-free benefits applications low gate charge qg results in simple drive requirement improved gate, avalanche and dynamic dv/dt ruggedness fully characterized capacitance and avalanche voltage and current enhanced body diode dv/dt capability parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 48 i d @ t c = 100c continuous drain current, v gs @ 10v 34 a i dm pulsed drain current 190 p d @t c = 25c power dissipation 140 w linear derating factor 0.95 w/c v gs gate-to-source voltage 20 v dv/dt peak diode recovery dv/dt 6.4 v/ns t j operating junction and -55 to + 175 c t stg storage temperature range soldering temperature, for 10 second 300(1.6mm from case ) mounting torqe, 6-32 or m3 screw 10 lbfin (1.1nm) absolute maximum ratings symbol parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 29a, v gs = 0v t rr reverse recovery time ??? 68 100 ns t j = 125c, i f = 29a q rr reverse recoverycharge ??? 160 240 nc di/dt = 100a/s i rrm reverse recoverycurrent ??? 4.5 6.8 a t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) s d g diode characteristics 48 190 d-pak i-pak irfr3412 irfu3412

2 www.kersemi.com parameter min. typ. max. units conditions g fs forward transconductance 25 ??? ??? s v ds = 50v, i d = 29a q g total gate charge ??? 59 89 i d = 29a q gs gate-to-source charge ??? 21 32 nc v ds = 50v q gd gate-to-drain ("miller") charge ??? 17 26 v gs = 10v, t d(on) turn-on delay time ??? 19 ??? v dd = 50v t r rise time ??? 68 ??? i d = 29a t d(off) turn-off delay time ??? 44 ??? r g = 6.8 ? t f fall time ??? 37 ??? v gs = 10v c iss input capacitance ??? 3430 ??? v gs = 0v c oss output capacitance ??? 270 ??? v ds = 25v c rss reverse transfer capacitance ??? 150 ??? pf ? = 1.0mhz c oss output capacitance ??? 1040 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 170 ??? v gs = 0v, v ds = 80v, ? = 1.0mhz c oss eff. effective output capacitance ??? 270 ??? v gs = 0v, v ds = 0v to 80v dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalanche energy ??? 160 mj i ar avalanche current ??? 29 a e ar repetitive avalanche energy ??? 14 mj avalanche characteristics static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 100 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.10 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.025 ? v gs = 10v, i d = 29a v gs(th) gate threshold voltage 3.5 ??? 5.5 v v ds = v gs , i d = 250a ??? ??? 1.0 a v ds = 95v, v gs = 0v ??? ??? 250 v ds = 80v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v i gss i dss drain-to-source leakage current repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) i sd 29a, di/dt 420a/s, v dd v (br)dss , t j 150c starting t j = 25c, l = 0.38mh, r g = 25 ? , i as = 29a, (see figure 12a) pulse width 300s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss calculated continuous current based on maximum allowable junction temperature. package limitation current is 30a. parameter typ. max. units r jc junction-to-case ??? 1.05 r ja junction-to-ambient (pcb mount)* ??? 50 c/w r ja junction-to-ambient ??? 110 thermal resistance

www.kersemi.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.01 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 0.1 1 10 100 1000 4.0 5.0 6.0 7.0 8.0 9.0 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 48a

4 www.kersemi.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v sd , source-todrain voltage (v) 0.1 1.0 10.0 100.0 1000.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 20406080100 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v vds= 50v vds= 20v i d = 29a

www.kersemi.com 5 fig 10a. switching time test circuit v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 10 20 30 40 50 t , case temperature ( c) i , drain current (a) c d limited by package

6 www.kersemi.com 25 50 75 100 125 150 175 0 50 100 150 200 250 300 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 12a 21a 29a q g q gs q gd v g charge d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + -
fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 12c. maximum avalanche energy vs. drain current r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs

www.kersemi.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet power mosfets

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12 in the ass embly line "a" ass embled on ww 16, 1999 example: with assembly t his is an irfr120 lot code 1234 ye ar 9 = 199 9 dat e code we e k 16 part number logo int ernat ional rect ifier as s e mb l y lot code 916a irfu120 34 year 9 = 1999 dat e code or p = designat es lead-free product (optional) note: "p" in as s embly line position i ndi cates "l ead-f r ee" 12 34 we e k 16 a = assembly site code part number irf u120 line a logo lot code as s e mb l y int ernational rectifier

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as s e mb l y example: wi t h as s e mb l y this is an irfu120 ye ar 9 = 199 9 dat e code line a we e k 1 9 in the assembly line "a" as s e mbl e d on ww 19, 1999 l ot code 5678 part number 56 irfu120 international logo rectifier lot code 919a 78 note: "p" in as s embly line position indicates "lead-free" 56 78 as s e mb l y lot code rectifier logo international irfu120 part number we e k 1 9 dat e code year 9 = 1999 a = as s e mb l y s i t e code p = designates lead-free product (optional)

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tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl n otes : 1 . controlling dimension : millimeter. 2 . all dimensions are shown in millimeters ( inches ). 3 . outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch

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